Self-assembled InAs quantum dots and their applications to nanostructure devices grown on GaAs

We report on the growth and device applications of self-assembled Inks quantum dots on (100)GaAs substrates grown by MBE. A series of distinct current peaks were observed up to 40K in a split-gate heterojunction field-effect transistor (HFET) with sell-assembled InAs dots formed on the bottom of the channel. Up to six electrons seemed to be involved per dot. RTD structure with large sized(800 Angstrom wide) dots showed hysteresis characteristics at 300K due to charging of the dots buried in the cathode side. The operation temperature dependence on device structure and materials are discussed.