Initial growth monitoring of GaN epitaxy on 6H-SiC by metal-organic molecular beam epitaxy

被引：7

作者：

Honda, T ^{[1
]}

Fujita, N ^{[1
]}

Maki, K ^{[1
]}

Yamamoto, Y ^{[1
]}

Kawanishi, H ^{[1
]}

机构：

[1] Kohgakuin Univ, Dept Elect Engn, Hachioji, Tokyo 1920015, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

GaN; MBE; 6H-SiC; RHEED; lattice constant; mixed phase;

D O I：

10.1016/S0022-0248(99)00577-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The lattice constants of GaN layers along the a-axis were estimated using reflection high-energy electron diffraction (RHEED) patterns during metal-organic molecular beam epitaxy (MO-MBE) growth. The lattice relaxation of GaN layers was observed during the initial growth. The crystal structure changed from the mixed (cubic and hexagonal) to the hexagonal phase at the high growth temperature of 814 degrees C. On the other hand, the crystal structure changed from the hexagonal to the mixed phase at the low growth temperature of 772 degrees C. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：392 / 395

页数：4

共 50 条

[11] Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy
Goh, W. H.
Martin, J.
Ould-Saad, S.
Gautier, S.
Sirenko, A. A.
Martinez, A.
Le Gratiet, L.
Ramdane, A.
Maloufi, N.
Ougazzaden, A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S510 - S513
[12] Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001)
Thamm, A
Brandt, O
Takemura, Y
Trampert, A
Ploog, KH
APPLIED PHYSICS LETTERS, 1999, 75 (07) : 944 - 946
[13] Growth of MgO by metal-organic molecular beam epitaxy
Niu, F
Hoerman, BH
Wessels, BW
CHEMICAL PROCESSING OF DIELECTRICS, INSULATORS AND ELECTRONIC CERAMICS, 2000, 606 : 45 - 50
[14] Effect of N2 microplasma treatment on initial growth of GaN by metal-organic molecular beam epitaxy
Suzuki, Yohei
Kusakabe, Yasuhiro
Uchiyama, Shota
Maruyama, Takahiro
Naritsuka, Shigeya
Shimizu, Kazuo
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (08)
[15] Growth of strain free GaN layers on 6H-SiC (0001) by plasma-assisted molecular beam epitaxy
Jeganathan, K
Shimizu, M
Okumura, H
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 143 - 147
[16] Low-temperature growth of GaN layers on (0001)6H-SiC by compound source molecular beam epitaxy
Honda, T
Hama, M
Aoki, Y
Akiyama, M
Obinata, N
Kawanishi, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04): : 2155 - 2157
[17] Morphological control of GaN buffer layers grown by molecular beam epitaxy on 6H-SiC(0001)
Hu, CW
Smith, DJ
Doak, RB
Tsong, IST
SURFACE REVIEW AND LETTERS, 2000, 7 (5-6) : 565 - 570
[18] Initial growth in 3C-SiC sublimation epitaxy on 6H-SiC
Syvajarvi, M.
Sritirawisarn, N.
Yakimova, R.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 195 - +
[19] Growth mechanism of AIN by metal-organic molecular beam epitaxy
Gherasoiu, I.
Nikishin, S.
Kipshidze, G.
Borisov, B.
Chandolu, A.
Ramkumar, C.
Holtz, M.
Temkin, H.
Journal of Applied Physics, 2004, 96 (11): : 6272 - 6276
[20] Growth mechanism of AlN by metal-organic molecular beam epitaxy
Gherasoiu, I
Nikishin, S
Kipshidze, G
Borisov, B
Chandolu, A
Ramkumar, C
Holtz, M
Temkin, H
JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) : 6272 - 6276

← 1 2 3 4 5 →