Growth mechanism of AIN by metal-organic molecular beam epitaxy

被引：0

作者：

Gherasoiu, I. ^{[1
]}

Nikishin, S. ^{[1
]}

Kipshidze, G. ^{[1
]}

Borisov, B. ^{[1
]}

Chandolu, A. ^{[1
]}

Ramkumar, C. ^{[1
]}

Holtz, M. ^{[1
]}

Temkin, H. ^{[1
]}

机构：

[1] Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409

来源：

Journal of Applied Physics | 2004年 / 96卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：6272 / 6276

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