Growth mechanism of AIN by metal-organic molecular beam epitaxy

被引：0
|
作者：
Gherasoiu, I. [1 ]
Nikishin, S. [1 ]
Kipshidze, G. [1 ]
Borisov, B. [1 ]
Chandolu, A. [1 ]
Ramkumar, C. [1 ]
Holtz, M. [1 ]
Temkin, H. [1 ]
机构：
[1] Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
来源：
Journal of Applied Physics | 2004年 / 96卷 / 11期
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：6272 / 6276
相关论文
共 50 条
  • [21] High growth rate metal-organic molecular beam epitaxy for the fabrication of GaAs space solar cells
    Freundlich, A
    Newman, F
    Monier, C
    Street, S
    Dargan, P
    Levy, M
    PROGRESS IN PHOTOVOLTAICS, 2000, 8 (03): : 333 - 338
  • [22] Thermogravimetric study of metal-organic precursors and their suitability for hybrid molecular beam epitaxy
    Fazlioglu-Yalcin, Benazir
    Hilse, Maria
    Engel-Herbert, Roman
    JOURNAL OF MATERIALS RESEARCH, 2024, 39 (03) : 436 - 448
  • [23] DEPOSITION OF OXIDE-FILMS BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY
    BADE, JP
    BAKER, EA
    KINGON, AI
    DAVIS, RF
    BACHMANN, KJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 327 - 331
  • [24] Growth of Pb(Ti,Zr)O3 thin films by metal-organic molecular beam epitaxy
    Avrutin, V.
    Liu, H. Y.
    Izyumskaya, N.
    Xiao, B.
    Ozgur, U.
    Morkoc, H.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (05) : 1333 - 1339
  • [25] Growth modes in metal-organic molecular beam epitaxy of TiO2 on r-plane sapphire
    Jalan, Bharat
    Engel-Herbert, Roman
    Cagnon, Joel
    Stemmer, Susanne
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (02): : 230 - 233
  • [26] Metal-organic molecular beam epitaxy growth of InN films on highly orientated TCO/Si(100) substrates
    Kuo, Shou-Yi
    Chen, Wei-Chun
    Hsiao, Chien-Nan
    Lai, Fang-I
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4963 - 4967
  • [27] Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy
    Kim, MS
    Ko, YD
    Moon, TH
    Myoung, JM
    Yun, I
    MICROELECTRONICS JOURNAL, 2006, 37 (02) : 98 - 106
  • [28] Effect of N2 microplasma treatment on initial growth of GaN by metal-organic molecular beam epitaxy
    Suzuki, Yohei
    Kusakabe, Yasuhiro
    Uchiyama, Shota
    Maruyama, Takahiro
    Naritsuka, Shigeya
    Shimizu, Kazuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (08)
  • [29] PERFORMANCE OF GAXIN1-XP/GAAS HETEROJUNCTIONS GROWN BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY AND METAL-ORGANIC VAPOR-PHASE EPITAXY
    GINOUDI, A
    PALOURA, EC
    FRANGIS, N
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) : 2980 - 2987
  • [30] CARBON DELTA-DOPING IN GAAS BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY
    YAMADA, T
    SHIRAHAMA, M
    TOKUMITSU, E
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8B): : L1123 - L1125
12345