Growth mechanism of AIN by metal-organic molecular beam epitaxy

被引：0
|
作者：
Gherasoiu, I. [1 ]
Nikishin, S. [1 ]
Kipshidze, G. [1 ]
Borisov, B. [1 ]
Chandolu, A. [1 ]
Ramkumar, C. [1 ]
Holtz, M. [1 ]
Temkin, H. [1 ]
机构：
[1] Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
来源：
Journal of Applied Physics | 2004年 / 96卷 / 11期
基金：
美国国家科学基金会;
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D O I：
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学科分类号：
摘要：
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页码：6272 / 6276
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