The oxidizing of grain boundary defects in BaTiO3-based PTCR ceramics

被引：0
|
作者：
Qi, JQ [1 ]
Zhang, NX [1 ]
Gui, ZL [1 ]
Li, LT [1 ]
机构：
[1] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
FERROELECTRICS | 2001年 / 263卷 / 1-4期
关键词：
oxidize; grain boundary; defects; PTCR; BaTiO3;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The oxygen pressure during sintering influences greatly on the positive temperature coefficient resistance (PTCR) effect of BaTiO3-based ceramics. Using Bi2O3 vapor acting as excess donor resulted in the dense samples with the resistance jumping > 8 magnitude orders and the room temperature resistivity similar to100Ohm.cm. The oxidized-defects at grain boundary acting as trap centers, would be responsible for the PTCR effect in BaTiO, ceramics.
引用
收藏
页码：1407 / 1412
页数：6
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