Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

被引：4
|
作者：
Chen, YH [1 ]
Yang, Z [1 ]
Wang, ZG [1 ]
Xu, B [1 ]
Liang, JB [1 ]
Qian, JJ [1 ]
机构：
[1] CHINESE ACAD SCI,INST SEMICOND,LAB SEMICOND MAT SCI,BEIJING 100083,PEOPLES R CHINA
来源：
PHYSICAL REVIEW B | 1997年 / 56卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.56.6770
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The in-plane optical anisotropy which comes from the heavy-hole and the light-holt transitions in InAs submonolayers inserted in a (311)-oriented GaAs matrix is studied by reflectance-difference spectroscopy (RDS). The steplike density of states obtained from RDS demonstrates that the ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only S-ML InAs. The degree of anisotropy is found to he independent of the layer coverage, and is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs submonolayer grown on a (311) GaAs surface.
引用
收藏
页码：6770 / 6773
页数：4
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