Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

被引：4

作者：

Chen, YH ^{[1
]}

Yang, Z ^{[1
]}

Wang, ZG ^{[1
]}

Xu, B ^{[1
]}

Liang, JB ^{[1
]}

Qian, JJ ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST SEMICOND,LAB SEMICOND MAT SCI,BEIJING 100083,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.56.6770

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The in-plane optical anisotropy which comes from the heavy-hole and the light-holt transitions in InAs submonolayers inserted in a (311)-oriented GaAs matrix is studied by reflectance-difference spectroscopy (RDS). The steplike density of states obtained from RDS demonstrates that the ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only S-ML InAs. The degree of anisotropy is found to he independent of the layer coverage, and is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs submonolayer grown on a (311) GaAs surface.

引用

页码：6770 / 6773

页数：4

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