Interface Engineering for High-k/Ge Gate Stack

被引：0

作者：

Xie, Ruilong ^{[1
]}

Zhu, Chunxiang ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, SNDL, Singapore 117576, Singapore

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, various interface engineering techniques for high-k/Ge gate stack for advanced CMOS device applications are reviewed. High-k gate stack formation on Ge substrate is first addressed with emphasis on pre-gate surface passivation. Post gate dielectric (post-gate) treatments are then discussed to further improve the high-k/Ge interface quality.

引用

页码：1244 / 1247

页数：4

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