Electron-beam-induced deposition of copper compound with low resistivity

被引：26
|
作者：
Ochiai, Y
Fujita, J
Matsui, S
机构：
[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba 305
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期
关键词：
D O I：
10.1116/1.588687
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electron-beam-induced deposition of copper was performed using hexafluoro-acetyoacetonate copper vinyl-trimethy-silane (HFA . Cu . VTMS) gas. The deposition was demonstrated by using a 30 keV environmental scanning electron microscope and a 50 keV electron beam Lithography system in an atmosphere of precursor gas: HFA . Cu . VTMS. The deposition rate, composition, and electrical resistivity of the deposited material were measured. The deposition rate was 6.6 nm/(C/cm(2)) at a pressure of 160 Pa. The resistivity was 3.6 mu Omega cm at room temperature deposited at a pressure of 6.7 x 10(-4) Pa. The resistivity is the lowest so far reported. (C) 1996 American Vacuum Society.
引用
收藏
页码：3887 / 3891
页数：5
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