Influence of implantation temperature and dose rate on secondary defect formation in 4H-SiC

被引：4
|
作者：
Ohno, T
Amemiya, K
机构：
[1] AIST, Ultra Low Loss Power Device Technol Res Body UPR, Tsukuba, Ibaraki 3058568, Japan
[2] AIST, Adv Power Devices Lab, R&D Assoc Future Devices, Tsukuba, Ibaraki 3058568, Japan
[3] Hitachi Ltd, UPR, FED, Hitachi, Ibaraki 3191221, Japan
[4] Hitachi Ltd, Power & Ind Syst R&D Lab, Hitachi, Ibaraki 3191221, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
dislocation loops; ion implantation; nucleation; secondary defects; TEM;
D O I：
10.4028/www.scientific.net/MSF.389-393.823
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of high temperature and high dose rate implantation on secondary defect formation in 4H-SiC were investigated by Transmission Electron Mcroscopy. At the same implantation energy and dose, the density of the secondary defect decreases and the mean size increases if the implantation temperature increases. On the contrary, a high density of secondary defects is formed after high dose rate implantation. These results are attributed to the decrease and the increase of the supersaturation ratio of interstitials in the implantation layers, respectively.
引用
收藏
页码：823 / 826
页数：4
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