A 6-18 GHz broadband high power MMIC for EW applications

被引：0
|
作者：
Barnes, AR
Moore, MT
Allenson, MB
机构：
来源：
1997 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS I-III: HIGH FREQUENCIES IN HIGH PLACES | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three stage, 6 - 18 GHz, dual channel MMIC power amplifier has been designed and tested. The design has been fabricated using a 0.25 mu m T-gate, MBE grown GaAs-InGaAs-AlGaAs, power PHEMT process at Texas Instruments. The measured single channel small signal gain is 24.1 +/- 3.4 dB over 6 - 18 GHz with an input return loss of >12 dB. The single channel output power at 2 dB gain compression, over 6 - 18 GHz is 3.4 +/- 1.1 Watts pulsed and 2.4 +/- 1.1 Watts CW. Using off chip combiners the dual channel amplifier gives 5.1 +/- 1.3 Watts pulsed, 4.3 +/- 1.3 Watts CW with a small signal gain of 24 dB +/- 3.5 dB over 6 - 18 GHz.
引用
收藏
页码：1429 / 1432
页数：4
相关论文
共 50 条
  • [31] An 8-18 GHz broadband high power amplifier
    Wang Lifa
    Yang Ruixia
    Wu Jingfeng
    Li Yanlei
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (11)
  • [32] A Wideband High-Efficiency GaN MMIC Power Amplifier for Sub-6-GHz Applications
    Hu, Liulin
    Liao, Xuejie
    Zhang, Fan
    Wu, Haifeng
    Ma, Shenglin
    Lin, Qian
    Tang, Xiaohong
    MICROMACHINES, 2022, 13 (05)
  • [33] 1-18 GHz Ultra-broadband High Gain Distributed MMIC Amplifier
    Makwana, Nilesh Dineshbhai
    Sinha, Shruti
    Dhar, Jolly
    Rao, Ch. V. N.
    2022 IEEE MICROWAVES, ANTENNAS, AND PROPAGATION CONFERENCE, MAPCON, 2022, : 254 - 258
  • [34] A 6-18 GHz GaN pHEMT Power Amplifier Using Non-Foster Matching
    Lee, Sangho
    Park, Hongjong
    Kim, Jihoon
    Kwon, Youngwoo
    2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,
  • [35] Monolithic Three-Stage 6-18 GHz High Power Amplifier with Distributed Interstage in Fra GaN Technology
    Dennler, Philippe
    Maroldt, Stephan
    Quay, Ruediger
    Ambacher, Oliver
    2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 29 - 32
  • [36] A 6-18 GHz GaAs Multifunction Transmitter and Receiver Chipset
    Wu, Xiao-Liang
    Wang, Jian-Bo
    Ye, Jian-Yu
    Hua, Guang
    2022 IEEE 10TH ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION, APCAP, 2022,
  • [37] Fully-integrated GaAsHBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications
    Hirata, M.
    Oka, T.
    Hasegawa, M.
    Amano, Y.
    Ishimaru, Y.
    Kawamura, H.
    Sakuno, K.
    ELECTRONICS LETTERS, 2006, 42 (22) : 1286 - 1287
  • [38] GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
    EADS Deutschland GmbH, Defence Electronics, Wörthstr. 85, 89077 Ulm, Germany
    不详
    Eur. Microw. Week, EuMW: Connecting World, Conf. Proc. - Eur. Microw. Conf., EuMC, (1658-1661):
  • [39] GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
    Sledzik, H.
    Reber, R.
    Bunz, B.
    Schuh, P.
    Oppermann, M.
    Musser, M.
    Seelmann-Eggebert, M.
    Quay, R.
    2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2010, : 416 - 419
  • [40] GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
    Sledzik, H.
    Reber, R.
    Bunz, B.
    Schuh, P.
    Oppermann, M.
    Musser, M.
    Seelmann-Eggebert, M.
    Quay, R.
    40TH EUROPEAN MICROWAVE CONFERENCE, 2010, : 1658 - 1661
12345