A 6-18 GHz broadband high power MMIC for EW applications

被引：0
|
作者：
Barnes, AR
Moore, MT
Allenson, MB
机构：
来源：
1997 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS I-III: HIGH FREQUENCIES IN HIGH PLACES | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three stage, 6 - 18 GHz, dual channel MMIC power amplifier has been designed and tested. The design has been fabricated using a 0.25 mu m T-gate, MBE grown GaAs-InGaAs-AlGaAs, power PHEMT process at Texas Instruments. The measured single channel small signal gain is 24.1 +/- 3.4 dB over 6 - 18 GHz with an input return loss of >12 dB. The single channel output power at 2 dB gain compression, over 6 - 18 GHz is 3.4 +/- 1.1 Watts pulsed and 2.4 +/- 1.1 Watts CW. Using off chip combiners the dual channel amplifier gives 5.1 +/- 1.3 Watts pulsed, 4.3 +/- 1.3 Watts CW with a small signal gain of 24 dB +/- 3.5 dB over 6 - 18 GHz.
引用
收藏
页码：1429 / 1432
页数：4
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