Current induced doping in graphene-based transistor with asymmetrical contact barriers

被引：5

作者：

Chen, Wei ^{[1
]}

Qin, Shiqiao ^{[1
,2
]}

Zhang, Xue-Ao ^{[1
,2
]}

Zhang, Sen ^{[1
]}

Fang, Jingyue ^{[1
]}

Wang, Guang ^{[1
]}

Wang, Chaocheng ^{[3
]}

Wang, Li ^{[1
,3
]}

Chang, Shengli ^{[1
,2
]}

机构：

[1] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China

[2] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China

[3] Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Carrier concentration - Graphene transistors - Drain current;

D O I：

10.1063/1.4867018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The metal/graphene contacts play a very important role in the performance of graphene-based devices. We report here a unique observation of current-induced doping in graphene transistors. The charge carrier type and the concentration in graphene can be manipulated by the current flowing through the graphene device, arising from the asymmetrical metal/graphene barriers between the source and drain electrodes and the accompanied current crowding effect. (C) 2014 AIP Publishing LLC.

引用

页数：4

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