Transverse current rectification in a graphene-based superlattice

被引：0
|
作者：
D. V. Zavialov
V. I. Konchenkov
S. V. Kruchkov
机构：
[1] Volgograd State Pedagogical University,
[2] Volgograd State Technical University,undefined
来源：
Semiconductors | 2012年 / 46卷
关键词：
Dirac Point; Silicon Carbide Substrate; Charge Carrier Motion; Miniband Width; Transverse Current Density;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A model of the energy spectrum of a superlattice based on graphene overlying a substrate of periodically arranged layers of different insulators is proposed. For such a structure, the dc current component induced by an elliptically polarized electromagnetic wave and directed normally to the sweeping field is calculated. The dependence of the transverse current density on the strengths of the sweeping electric field and the elliptically polarized wave components is analyzed.
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收藏
页码：109 / 116
页数：7
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