Strain effect for different phosphorus content of InGaAs/GaAsP super-lattice in GaAs p-i-n single junction solar cell

被引：7

作者：

Watanabe, Kentaroh ^{[1
]}

Wang, Yunpeng ^{[1
]}

Sodabanlu, Hassanet ^{[1
]}

Sugiyama, Masakazu ^{[2
]}

Nakano, Yoshiaki ^{[1
,2
]}

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tokyo, Sch Engn, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1338656, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 401卷

关键词：

Super lattices; Metalorganic vapor phase epitaxy; Quantum wells; Semiconducting III V materials; Solar cells; VOLTAGE ENHANCEMENT;

D O I：

10.1016/j.jcrysgro.2014.02.053

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The GaAs p-i-n single junction solar cell with InGaAs/GaAsP super lattice (SL) in the i-region was fabricated by metal organic vapor phase epitaxy (MOVPE). Using the in situ wafer curvature monitoring, a series of SL solar cell samples with different phosphorus composition in the barrier GaAsP layer was evaluated the accumulated strain during MOVPE growth. The sample with larger phosphorus content in GaAsP barrier layer reduced total strain accumulation, resulted in improved solar cell performance regardless to the higher potential barrier. This result indicated the about 3-nm thick barrier is sufficiently thin for carrier extraction by assisting the tunneling effect. Furthermore, the accumulated strain during MOVPE growth of SL deteriorate solar cell. (C) 2014 Elsevier B.V. All rights reserved.

引用

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页码：712 / 716

页数：5

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