Role of reaction products in F- production in low-pressure, high-density CF4 plasmas

被引:16
|
作者
Hayashi, D [1 ]
Nakamoto, M [1 ]
Takada, N [1 ]
Sasaki, K [1 ]
Kadota, K [1 ]
机构
[1] Nagoya Univ, Dept Elect, Nagoya, Aichi 4648603, Japan
关键词
negative ion; F-; dissociative electron attachment; helicon-wave plasmas; CF4; plasma;
D O I
10.1143/JJAP.38.6084
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper we report on the role of reaction products in F- production in low-pressure, high-density CF4 plasmas. The spatial distributions and temporal variations of F- density (n(-)), and plasma parameters in the discharge phase and afterglow of helicon-wave CF4 plasmas which had an electron density (n(e)) of 10(11)-10(13) cm(-3) were measured by the laser-photodetachment technique combined with a heated Langmuir probe. The relationship between the n(-)/n(e) ratio and the degree of ionization was investigated in the discharge phase. The n(-)/n(e) ratios in the plasma column of highly ionized plasmas were much higher than those expected from dissociative electron attachment to CF4, and n(-)/n(e) ratios were larger by several orders of magnitude in the outer region. The efficient increase in n(-) was observed in the afterglow and n(-)/n(e) was enhanced by increasing the discharge duration. It is concluded that the attachment to the reaction products contributes greatly to F- production in low-pressure, high-density plasmas.
引用
收藏
页码:6084 / 6089
页数:6
相关论文
共 50 条
  • [41] A LOW RADIOACTIVITY ACRYLIC TPC FILLED WITH CF4 AT HIGH-PRESSURE
    BROGGINI, C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 332 (03): : 413 - 418
  • [43] Absolute density and reaction kinetics of fluorine atoms in high-density c-C4F8 plasmas
    Sasaki, K
    Kawai, Y
    Suzuki, C
    Kadota, K
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) : 7482 - 7487
  • [44] Particle formation in acetylene very low-pressure high density magnetized plasmas
    Calafat, Maria
    Escaich, David
    Clergereaux, Richard
    Raynaud, Patrice
    Segui, Yvan
    APPLIED PHYSICS LETTERS, 2007, 91 (18)
  • [45] Absolute densities and kinetics of H atoms and CFx radicals in low-pressure, high-density CHF3 plasmas
    Sasaki, K
    Okamoto, M
    THIN SOLID FILMS, 2006, 506 : 705 - 709
  • [46] Rate Coefficient for Self-Association Reaction of CF2 Radicals Determined in the Afterglowof Low-Pressure C4F8 Plasmas
    C. Suzuki
    K. Sasaki
    K. Kadota
    Plasma Chemistry and Plasma Processing, 2001, 21 : 139 - 147
  • [47] Kinetic energy release of F- desorption from condensed CF4 following low energy electron impact
    LeCoat, Y
    Hedhili, NM
    Azria, R
    Tronc, M
    Weik, F
    Illenberger, E
    INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1997, 164 (03): : 231 - 239
  • [48] Rate coefficient for self-association reaction of CF2 radicals determined in the afterglow of low-pressure C4F8 plasmas
    Suzuki, C
    Sasaki, K
    Kadota, K
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 2001, 21 (01) : 139 - 147
  • [49] CHEMICAL ETCHING OF SIO2 BY CF4 AT LOW-PRESSURE - DOES IT DEPEND ON THE PLASMA CHEMISTRY
    HERSHKOWITZ, N
    DING, J
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1993, 206 : 63 - IEC
  • [50] CF4 decomposition in a low-pressure ICP: influence of applied power and O2 content
    Setareh, Mahsa
    Farnia, Morteza
    Maghari, Ali
    Bogaerts, Annemie
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (35)