Single Event Effects Sensitivity of 180 and 350 nm SiGe HBT Microcircuits

被引：0
|
作者：
Koga, R. [1 ]
Paul, C. [1 ]
Romeo, D. [1 ]
Petrosyan, V [1 ]
George, J. [1 ]
机构：
[1] Aerosp Corp, 2310 E El Segundo Blvd, El Segundo, CA 90245 USA
来源：
2013 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2013年
关键词：
CIRCUIT;
D O I：
暂无
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
SEE sensitivity to heavy ions and protons is observed with 180 and 350 nm SiGe HBT microcircuits incorporating identical ADC converters. 180 nm devices show relatively reduced sensitivity at low LET values.
引用
收藏
页数：7
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