Backwall superstrate configuration for ultrathin Cu(In,Ga)Se2 solar cells

被引：36
|
作者：
Larsen, J. K. [1 ]
Simchi, H. [1 ,2 ]
Xin, P. [1 ,2 ]
Kim, K. [1 ]
Shafarman, W. N. [1 ,2 ]
机构：
[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 03期
关键词：
THICKNESS; TRANSPARENT; CONTACTS; ZNO;
D O I：
10.1063/1.4862651
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A backwall superstrate device structure that outperforms conventional substrate Cu(In,Ga)Se-2 devices for thin absorbers is demonstrated. The backwall structure (glass/In2O3-SnO2/MoO3-x/Cu(In,Ga)Se-2/CdS/i-ZnO/Ag) utilizes a MoO3-x transparent back contact to allow illumination of the device from the back. In combination with a silver front reflector this cell structure is tailored to enhance performance of devices with submicron thick absorbers. It was found that devices with the backwall configuration outperform substrate devices in the absorber thickness range d(CIGS) = 0.1-0.5 mu m. The advantage of the backwall configuration is mainly through superior J(SC), achieved by application of a front reflector and elimination of parasitic absorption in CdS. (C) 2014 AIP Publishing LLC.
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页数：4
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