Electrical properties of the heterojunction in Cu(In,Ga)Se2 superstrate solar cells

被引：0
|
作者：
Haug, FJ [1 ]
Rudmann, D [1 ]
Romeo, A [1 ]
Zogg, H [1 ]
Tiwari, AN [1 ]
机构：
[1] Swiss Fed Labs Mat Testing & Res EMPA, CH-8600 Dubendorf, Switzerland
来源：
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The electrical properties of heterojunctions between wide gap n-type oxides and the p-type semiconductor Cu(In,Ga)Se-2 have been studied. The investigated oxides were a bilayer of undoped and aluminium doped ZnO, and the commercially available transparent conducting oxides SnO2:F (FTO) and In2O3-SnO2 (ITO). The junction of CIGS with ZnO showed the characteristic of a pn-junction, the temperature dependence of the current-voltage characteristics suggests interface recombination as dominating transport mechanism. This junction is suitable for photovoltaic light conversion and for the development of solar cells in superstrate configuration. The junctions of CIGS with FTO and with ITO showed poor rectifying behaviour and little or no response to illumination. The quasi-ohmic behaviour of these junctions was successfully used to replace the Molybdenum back contact with a transparent back contact in Cu(In,Ga)Se-2 substrate solar cells.
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页码：2853 / 2858
页数：6
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