Ultrathin nitrided gate dielectrics by plasma-assisted processing

被引：12

作者：

Gusev, EP ^{[1
]}

Buchanan, DA

Jamison, P

Zabel, TH

Copel, M

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Adv Semicond Technol Ctr, Hopewell Jct, NY 12533 USA

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00340-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrathin (<3nm) gate dielectrics made by plasma nitridation of SiO(2) films have been studied by a combination of physical (ellipsometry, Nuclear Reaction Analysis, Medium Energy Ion Scattering, and Atomic Force Microscopy) and electrical (C-V, I-V, and constant voltage stress) methods. The main observation we report here is a reduction of leakage current in the nitrided oxides at the expense of reduced (peak) mobility, flatband voltage shift (for high concentration of incorporated nitrogen) and lower breakdown strength.

引用

页码：67 / 70

页数：4

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