Theoretical investigation of ultrathin gate dielectrics

被引：3

作者：

Demkov, AA ^{[1
]}

Zhang, XD

Loechelt, H

机构：

[1] Motorola Inc, Phys Sci Res Labs, Tempe, AZ 85284 USA

[2] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA

[3] Arizona State Univ, Dept Math, Tempe, AZ 85287 USA

来源：

VLSI DESIGN | 2001年 / 13卷 / 1-4期

关键词：

gate dielectrics; electronic structure; quantum transport; oxynitrides;

D O I：

10.1155/2001/98032

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Sidielectric interface is used to generate the Si-SiO2-Si and Si-SiON-SiO2-Si model metaloxide-semiconductor (MOS) structures. We discuss methods to estimate the valence band discontinuity at the corresponding interface. We use Landauer's ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers.

引用

页码：135 / 143

页数：9

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