Energy-level alignment and charge injection at metal/C60/organic interfaces

被引：18
|
作者：
Wang, Z. B. [1 ]
Helander, M. G. [1 ]
Greiner, M. T. [1 ]
Qiu, J. [1 ]
Lu, Z. H. [1 ]
机构：
[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期
基金：
加拿大自然科学与工程研究理事会;
关键词：
adsorption; elemental semiconductors; Fermi level; fullerenes; gold; interface states; organic semiconductors; Schottky barriers; semiconductor heterojunctions; semiconductor thin films; ultraviolet photoelectron spectra; LIGHT-EMITTING-DIODES; C-60; METAL; CELLS;
D O I：
10.1063/1.3189176
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The energy-level alignment and charge injection at metal/C-60/organic interfaces have been studied by ultraviolet photoelectron spectroscopy and temperature dependent current-voltage (IV) measurements. It is found that the Fermi level at the interface is pinned to similar to 4.7 eV by adsorbed C-60 molecules on the metal surface, resulting in more favorable energy level alignment for charge injection. The findings are in excellent agreement with interface dipole theory derived from traditional semiconductor physics.
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页数：3
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