Energy-level alignment and charge injection at metal/C60/organic interfaces

被引：18

作者：

Wang, Z. B. ^{[1
]}

Helander, M. G. ^{[1
]}

Greiner, M. T. ^{[1
]}

Qiu, J. ^{[1
]}

Lu, Z. H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

adsorption; elemental semiconductors; Fermi level; fullerenes; gold; interface states; organic semiconductors; Schottky barriers; semiconductor heterojunctions; semiconductor thin films; ultraviolet photoelectron spectra; LIGHT-EMITTING-DIODES; C-60; METAL; CELLS;

D O I：

10.1063/1.3189176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy-level alignment and charge injection at metal/C-60/organic interfaces have been studied by ultraviolet photoelectron spectroscopy and temperature dependent current-voltage (IV) measurements. It is found that the Fermi level at the interface is pinned to similar to 4.7 eV by adsorbed C-60 molecules on the metal surface, resulting in more favorable energy level alignment for charge injection. The findings are in excellent agreement with interface dipole theory derived from traditional semiconductor physics.

引用

页数：3

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