Nondestructive stiffness and density characterization of porous low-K films by surface acoustic wave spectroscopy

被引：13
|
作者：
Flannery, CM [1 ]
Baklanov, MR [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年
关键词：
D O I：
10.1109/IITC.2002.1014943
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanoporous Methylsilsesquioxane (MSSQ) films are a leading candidate for low dielectric constant (k) materials for microelectronic interconnect. Mechanical strength reduces rapidly with lower k (increasing porosity) however, and there is a lack of techniques to characterize these properties in the k! 2 range. This work reports surface acoustic wave spectroscopy characterization of density/porosity and Young's modulus values of a range of Methylsilsesquioxane films from different manufacturers. We show that the results are validated by independent measurements and that nanoindentation measurements consistently overestimate stiffness.
引用
收藏
页码：233 / 235
页数：3
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