Nondestructive stiffness and density characterization of porous low-K films by surface acoustic wave spectroscopy

被引：13

作者：

Flannery, CM ^{[1
]}

Baklanov, MR ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanoporous Methylsilsesquioxane (MSSQ) films are a leading candidate for low dielectric constant (k) materials for microelectronic interconnect. Mechanical strength reduces rapidly with lower k (increasing porosity) however, and there is a lack of techniques to characterize these properties in the k! 2 range. This work reports surface acoustic wave spectroscopy characterization of density/porosity and Young's modulus values of a range of Methylsilsesquioxane films from different manufacturers. We show that the results are validated by independent measurements and that nanoindentation measurements consistently overestimate stiffness.

引用

页码：233 / 235

页数：3

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