Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)

被引：12
|
作者：
Demczyk, BG
Naik, VM
Hameed, S
Naik, R [1 ]
机构：
[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48202 USA
[2] USAF, Res Lab, SNHX, Hanscom AFB, MA 01731 USA
[3] Univ Michigan, Dept Nat Sci, Dearborn, MI 48128 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 94卷 / 2-3期
关键词：
SiGe alloy films; Raman spectroscopy; strain relaxation; epitaxy; dislocations; transmission electron microscopy;
D O I：
10.1016/S0921-5107(02)00084-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial Si1-xGex films of thickness similar to200 nm have been grown on Si(l 00) and Ge(100) substrates using chemical vapor deposition. Both X-ray diffraction and Raman studies show that the films are Ge rich (x = 0.7) with no residual strain. Cross-sectional transmission electron microscopy studies have been used to demonstrate that the films relax by different mechanisms leading to different surface morphology and interface structure. Films in tension (SiGe/Ge) were seen to relax through the creation of misfit dislocations, whereas those in compression (SiGe/Si) formed islands without dislocations. Consideration of the misfit dislocation formation mechanism in these materials has been used to explain this behavior phenomenologically. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：196 / 201
页数：6
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