A Low Power, Offset Compensated, CMOS Only Bandgap Reference in 22 nm FD-SOI Technology

被引：0

作者：

Poongodan, Prajith Kumar ^{[1
]}

Bora, Pragoti Pran ^{[1
]}

Borggreve, David ^{[1
]}

Vanselow, Frank ^{[1
]}

Maurer, Linus ^{[2
]}

机构：

[1] Fraunhofer EMFT Res Inst Microsyst & Solid State, Munich, Germany

[2] Univ Bundeswehr, Munich, Germany

来源：

2018 7TH INTERNATIONAL CONFERENCE ON MODERN CIRCUITS AND SYSTEMS TECHNOLOGIES (MOCAST) | 2018年

关键词：

bandgap voltage reference; FD-SOI CMOS; Chopping; Ultra low voltage Bandgap Reference;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper a very low supply voltage Bandgap Voltage Reference Circuit (BGR) has been presented. A temperature coefficient of 35 ppm/C-degrees is achieved with the all-MOSFET based circuit that operates at a minimum supply voltage of 600 mV and consumes a total power of 9.5 mu W. Chopping technique has been employed to eliminate the error at the output caused by the DC offset of the amplifier. The presented circuit has been designed in a 22 nm Fully Depleted Silicon on Insulator (FD-SOI) CMOS process.

引用

页数：4

共 50 条

[21] A Low-Power Reflection-Coefficient Sensor for 28-GHz Beamforming Transmitters in 22-nm FD-SOI CMOS
Zhang, Yang
Mangraviti, Giovanni
Nguyen, Johan
Zong, Zhiwei
Kapusuz, Kamil Yavuz
Lemey, Sam
Rogier, Hendrik
Gramegna, Giuseppe
Wambacq, Piet
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (12) : 3704 - 3714
[22] 22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-1 MCU Applications
Lee, K.
Chao, R.
Yamane, K.
Naik, V. B.
Yang, H.
Kwon, J.
Chung, N. L.
Jang, S. H.
Behin-Aein, B.
Lim, J. H.
Liu, S. K. B.
Toh, E. H.
Gan, K. W.
Zeng, D.
Thiyagarajah, N.
Goh, L. C.
Ling, T.
Ting, J. W.
Hwang, J.
Zhang, L.
Low, R.
Krishnan, R.
Zhang, L.
Tan, S. L.
You, Y. S.
Seet, C. S.
Cong, H.
Wong, J.
Woo, S. T.
Quek, E.
Siah, S. Y.
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018,
[23] A Low-Power Phase Frequency Detector Using SRAM Cells in 22nm FD-SOI
Jamadi, Behdad
Lee, Jungmin
Walling, Jeffery S.
2024 22ND IEEE INTERREGIONAL NEWCAS CONFERENCE, NEWCAS 2024, 2024, : 218 - 222
[24] Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR
Issartel, D.
Gao, S.
Pittet, P.
Cellier, R.
Golanski, D.
Cathelin, A.
Calmon, F.
SOLID-STATE ELECTRONICS, 2022, 191
[25] A 30 GHz Low Power & High Gain Low Noise Amplifier with Gm-boosting in 28nm FD-SOI CMOS Technology
Konidas, Georgios
Gkoutis, Panagiotis
Kolios, Vasilis
Kalivas, Grigorios
2019 8TH INTERNATIONAL CONFERENCE ON MODERN CIRCUITS AND SYSTEMS TECHNOLOGIES (MOCAST), 2019,
[26] A Reconfigurable 2.4GHz Power Amplifier for Polar Transmitters in 28nm FD-SOI CMOS technology
Gkoutis, Panagiotis
Kolios, Vasilis
Kalivas, Grigorios
2019 27TH TELECOMMUNICATIONS FORUM (TELFOR 2019), 2019, : 474 - 477
[27] A 0.35 mW 70 GHz Divide-by-4 TSPC Frequency Divider on 22 nm FD-SOI CMOS Technology
Tibenszky, Zoltan
Carta, Corrado
Ellinger, Frank
2020 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2020, : 243 - 246
[28] A Fully-Differential Travelling-Wave Amplifier up to 110 GHz in a 22 nm FD-SOI CMOS Technology
Gatzastras, Athanasios
Volmer, Christian
Kallfass, Ingmar
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC, 2023, : 365 - 368
[29] A Low-Power Low-Voltage Down-Conversion Mixer for 5G Applications at 28 GHz in 22-nm FD-SOI CMOS Technology
Testa, Paolo Valerio
Szilagyi, Laszlo
Xu, Xin
Carta, Corrado
Ellinger, Frank
2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2020, : 911 - 913
[30] Avalanche Transient Simulations of SPAD integrated in 28nm FD-SOI CMOS Technology
Issartel, D.
Gao, S.
Hagen, S.
Pittet, P.
Cellier, R.
Golanski, D.
Cathelin, A.
Calmon, F.
2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2021,

← 1 2 3 4 5 →