Improvement and analysis of implanted-emitter bipolar junction transistors in 4H-SiC

被引：5
|
作者：
Tang, Y [1 ]
Fedison, JB [1 ]
Chow, TP [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
4H-SiC; bipolar junction transistor; implant;
D O I：
10.4028/www.scientific.net/MSF.389-393.1329
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epi-base, implanted-emitter, npn bipolar transistors were fabricated with different emitter implantation species and annealing cycles, but with the same dose of 3 x 10(15)cm(-2). The best performance comes from Sample C (Phosphorus, 1600degreesC anneal) which shows a blocking voltage of 500V and maximum common emitter current gain (beta) of 8. Comparing to the previous results (60V blocking and beta of 40), the blocking voltage is greatly improved with reduced current gain due to the decrease of base transport factor. The samples also show negative temperature coefficient of beta, similar to the previous samples, easing device-paralleling problems.
引用
收藏
页码：1329 / 1332
页数：4
相关论文
共 50 条
  • [41] High-Voltage 4H-SiC Bipolar Junction Transistors With Epitaxial Regrowth of the Base Contact
    Sharma, Santosh
    Li, C.
    Bhat, Ishwara B.
    Chow, T. P.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (12) : 3360 - 3366
  • [42] Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor
    Ortolland, S., 2001, Trans Tech Publ, Uetikon-Zuerich (353-356)
  • [43] Analysis of transit times an minority carrier mobility in n-p-n 4H-SiC bipolar junction transistors
    Zhao, F
    Perez, I
    Huang, CF
    Torvik, J
    Van Zeghbroeck, B
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) : 2541 - 2545
  • [44] Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor
    Ortolland, S
    Wright, NG
    Johnson, CM
    Knights, AP
    Coleman, PG
    Burrows, CP
    Pidduck, AJ
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 567 - 570
  • [45] A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors
    Eriksson, K. G. P.
    Domeij, M.
    Lee, H-S.
    Zetterling, C. -M.
    Ostling, M.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1171 - 1174
  • [46] High current gain 4H-SiC bipolar junction transistor
    张有润
    施金飞
    刘影
    孙成春
    郭飞
    张波
    Journal of Semiconductors, 2016, 37 (04) : 61 - 64
  • [47] High current gain 4H-SiC bipolar junction transistor
    Zhang Yourun
    Shi Jinfei
    Liu Ying
    Sun Chengchun
    Guo Fei
    Zhang Bo
    JOURNAL OF SEMICONDUCTORS, 2016, 37 (04)
  • [48] Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
    Zhang, Nuo
    Rao, Yi
    Xu, Nuo
    Maralani, Ayden
    Pisano, Albert P.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1013 - 1016
  • [49] High current gain 4H-SiC bipolar junction transistor
    张有润
    施金飞
    刘影
    孙成春
    郭飞
    张波
    Journal of Semiconductors, 2016, (04) : 61 - 64
  • [50] Investigation of TiW contacts to 4H-SiC bipolar junction devices
    Lee, Hyung-Seok
    Domeij, Martin
    Zetterling, Carl-Mikael
    Ostling, Mikael
    Lu, Jun
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 887 - 890
12345