Improvement and analysis of implanted-emitter bipolar junction transistors in 4H-SiC

被引：5
|
作者：
Tang, Y [1 ]
Fedison, JB [1 ]
Chow, TP [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
4H-SiC; bipolar junction transistor; implant;
D O I：
10.4028/www.scientific.net/MSF.389-393.1329
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epi-base, implanted-emitter, npn bipolar transistors were fabricated with different emitter implantation species and annealing cycles, but with the same dose of 3 x 10(15)cm(-2). The best performance comes from Sample C (Phosphorus, 1600degreesC anneal) which shows a blocking voltage of 500V and maximum common emitter current gain (beta) of 8. Comparing to the previous results (60V blocking and beta of 40), the blocking voltage is greatly improved with reduced current gain due to the decrease of base transport factor. The samples also show negative temperature coefficient of beta, similar to the previous samples, easing device-paralleling problems.
引用
收藏
页码：1329 / 1332
页数：4
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