Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

被引：16

作者：

Brouzet, V. ^{[1
,2
,3
]}

Salem, B. ^{[1
,2
]}

Periwal, P. ^{[1
,2
]}

Rosaz, G. ^{[1
,2
]}

Baron, T. ^{[1
,2
]}

Bassani, F. ^{[1
,2
]}

Gentile, P. ^{[4
,5
]}

Ghibaudo, G. ^{[3
]}

机构：

[1] Univ Grenoble Alpes, LTM, F-38000 Grenoble, France

[2] CNRS, LTM, F-38000 Grenoble, France

[3] Univ Grenoble Alpes, MINATEC INPG, IMEP LAHC, F-38016 Grenoble, France

[4] Univ Grenoble Alpes, INAC SiNaPS SP2M, F-38000 Grenoble, France

[5] CEA, INAC SiNaPS SP2M, F-38000 Grenoble, France

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 121卷 / 03期

关键词：

FIELD-EFFECT TRANSISTORS; ELECTRICAL CHARACTERISTICS; IMPACT;

D O I：

10.1007/s00339-015-9507-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about with of doped regions (p-type and n-type) and of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide (), 80 nm of nickel and 120 nm of aluminium. At room temperature, , and an ratio of about with a very low current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I (on) current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

引用

页码：1285 / 1290

页数：6

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