Interface thermal resistance of nanostructured FeCoCu film and Si substrate

被引：0

作者：

Nikolaenko, Yuri M. ^{[1
]}

Medvedev, Yuri V. ^{[1
]}

Genenko, Yuri A. ^{[2
]}

Ghafari, Mohammad ^{[3
]}

Hahn, Horst ^{[3
]}

机构：

[1] Natl Acad Sci Ukraine, Donetsk Inst Phys & Technol, R Luxemburg Str 72, UA-73114 Donetsk, Ukraine

[2] Tech Univ Darmstadt, Inst fur MatWissenschaft, Darmstadt 64287, Germany

[3] Forschungszentrum Karlsruhe, Inst fur Nanotechnol, Karlsruhe 76021, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 5 | 2006年 / 3卷 / 05期

关键词：

D O I：

10.1002/pssc.200563135

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Results of measurement of thermal resistance (R,,) of film substrate interface of 10 nm (Fe1-xCox)(1-x)Cu-y film on Si substrate with 50 nm SiO2 sublayer are presented. The estimated magnitude is two orders greater then R-FS of epitaxial manganite films on StTiO(3) substrate with and without sublayer. The significant increase of R-FS is explained by granular structure of film with average size of grain about 10 nm. In this case the additional thermal barier in the film-substrate interface is appeared. It provides the change of regime of phonons propagation from ballistic to diffusion one. The principle possibility of variation of R-FS in wide range as a task of nanotechnology is discussed.

引用

页码：1343 / +

页数：2

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