Enhancement of crystallization of an si film on a quartz substrate by thermal electron irradiation

被引：0

作者：

Horita, S ^{[1
]}

Miyoshi, S ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Hokuri Ku, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 12A期

关键词：

Si; thermal electron; crystallization; silicon; polycrystalline;

D O I：

10.1143/JJAP.41.L1396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the influence of thermal electron irradiation on the crystallization of a growing Si film on a quartz substrate. The Si film was deposited at the substrate temperature of 530degreesC by the vacuum evaporation method, being irradiated by thermal electrons generated from the heated evaporator as the Si source. The Raman spectra of the Si film showed that crystallization of the Si film was enhanced by increasing the thermal electron current density to about 1.5 mA/m(2). Also, the crystallization fraction was increased up to about 50% by connecting one of the edges of the growing film to ground electrically.

引用

页码：L1396 / L1398

页数：3

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