Copper thermal diffusion in TaN film on Si substrate

被引：12
|
作者：
Jiang, L
He, P
He, GW [1 ]
Zong, XF
Lee, CP
机构：
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
[2] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 11A期
关键词：
barrier layer; grain boundary diffusion; Cu interconnection; transmission electron microscopy; interface;
D O I：
10.1143/JJAP.41.6525
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal diffusion of copper in a Cu/TaN/Si-sub sample was investigated after annealing at 630degreesC for 60 min. The interface morphology, copper silicide grains and SiO2 thin layer were observed using high resolution transmission electron microscope (HRTEM). Depth profiles were obtained with an energy dispersion X-ray spectrometer (EDS) assembled in the TEM system. Based on the grain boundary theory of Fisher and the approximation solution of Le Claire, thermal diffusivity of copper into the tantalum nitride layer was estimated.
引用
收藏
页码：6525 / 6528
页数：4
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