Interface thermal resistance of nanostructured FeCoCu film and Si substrate

Results of measurement of thermal resistance (R,,) of film substrate interface of 10 nm (Fe1-xCox)(1-x)Cu-y film on Si substrate with 50 nm SiO2 sublayer are presented. The estimated magnitude is two orders greater then R-FS of epitaxial manganite films on StTiO(3) substrate with and without sublayer. The significant increase of R-FS is explained by granular structure of film with average size of grain about 10 nm. In this case the additional thermal barier in the film-substrate interface is appeared. It provides the change of regime of phonons propagation from ballistic to diffusion one. The principle possibility of variation of R-FS in wide range as a task of nanotechnology is discussed.