Void free at interface of the SiC film and Si substrate

被引：3
|
作者：
Sun, Y
Miyasato, T
Masuda, K
Enokida, T
Hagino, H
机构：
[1] Kyushu Inst Technol, Dept Appl Sci Integrated Syst Engn, Grad Sch Engn, Kitakyushu, Fukuoka 8048550, Japan
[2] Exploitat Next Generat Co Ltd, Semicond Lab, Wakamatsu Ku, Kitakyushu, Fukuoka 8080135, Japan
[3] Fukuryou Semicon Engn Corp, Qual Evaluat & Chem Anal Dept, Nishi Ku, Fukuoka 8190192, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 12A期
关键词：
hollow void; silicon carbide; Si substrate; SiC/Si interface; sputtering; hydrogen plasma; photolithography; pyramiding treatment; etching;
D O I：
10.1143/JJAP.43.L1517
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The hollow voids formed at the SiC/Si interface during growth of SiC film can be free by pyramiding the Si substrate. The surface of the Si substrate was etched to tetragonal pyramids with an interval of 2 mum before the growth of the SiC film. The SiC film was grown by reaction of the pyramided Si substrate with the hydrogen plasma containing C and Si species. No hollow void was formed at the SiC/Si interface in the conditions of the growth temperature of 1000degreesC and the growth rate of 2.6 x 10(-4) monolayers/s.
引用
收藏
页码：L1517 / L1519
页数：3
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