Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths

被引：32

作者：

Johnson, JW

Ren, F

Pearton, SK

Baca, AG

Han, J

Dabiran, AM

Chow, PP

机构：

[1] SVT Associates, Eden Prairie, MN 55344 USA

[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[5] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2002年 / 2卷 / 3-4期

关键词：

D O I：

10.1166/jnn.2002.092

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching and power microwave applications.

引用

页码：325 / 332

页数：8

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