Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths

被引：32
|
作者：
Johnson, JW
Ren, F
Pearton, SK
Baca, AG
Han, J
Dabiran, AM
Chow, PP
机构：
[1] SVT Associates, Eden Prairie, MN 55344 USA
[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[5] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2002年 / 2卷 / 3-4期
关键词：
D O I：
10.1166/jnn.2002.092
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching and power microwave applications.
引用
收藏
页码：325 / 332
页数：8
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