Thermal stability of strained Si on relaxed Si1-XGeX buffer layers

被引：0

作者：

Mooney, PM ^{[1
]}

Koester, SJ ^{[1
]}

Ott, JA ^{[1
]}

Jordan-Sweet, JL ^{[1
]}

Chu, JO ^{[1
]}

Chan, KK ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY | 2002年 / 686卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal stability of strained Si on relaxed Si1-xGex structures annealed at 1000 degreesC was investigated using high-resolution x-ray diffraction, Raman spectroscopy and transmission electron microscopy. Interdiffusion at the Si/Si1-xGex interface is negligible for annealing times <30 sec and is independent of the initial Si layer thickness and the composition of the Si1-xGex layer. In all cases the Si layers remained nearly fully strained, but a significant density of misfit dislocations was seen in layers that exceeded the critical thickness for dislocation glide. The Si layer thickness could be measured for layers as thin as 7 nm.

引用

页码：3 / 8

页数：6

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