A Ku-Band LNA in 0.35-μm SiGe BiCMOS Technology

被引：0
|
作者：
Liu, Bing [1 ]
Ma, Kaixue [1 ]
Mou, Shouxian [1 ]
Meng, Fanyi [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu 610054, Sichuan, Peoples R China
来源：
2017 INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IEEE IWEM 2017) | 2017年
基金：
中国国家自然科学基金;
关键词：
LNA; Ku-Band; SiGe BiCMOS; POWER; GHZ;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a Ku-Band low-noise amplifier using 0.35-mu m SiGe BiCMOS technology. An inductively degenerated common-source topology combined with floating-body transistors are used to improve the noise figure of the LNA. The simulation results show that this 3-stage LNA achieves 3.2 dB minimum noise figure and 18.5 dB power gain over 12-18 GHz. An output P-1dB of 8.6 dBm is obtained at 15 GHz. And the core area of this LNA is only 0.65x0.40 mm(2) excluding testing pads.
引用
收藏
页码：168 / 170
页数：3
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