Quantifying Chemical Structure and Machine-Learned Atomic Energies in Amorphous and Liquid Silicon

被引:35
|
作者
Bernstein, Noam [1 ]
Bhattarai, Bishal [2 ]
Csanyi, Gabor [3 ]
Drabold, David A. [2 ]
Elliott, Stephen R. [4 ]
Deringer, Volker L. [3 ,4 ]
机构
[1] US Naval Res Lab, Ctr Mat Phys & Technol, Washington, DC 20375 USA
[2] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
[3] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[4] Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England
基金
英国工程与自然科学研究理事会;
关键词
amorphous materials; computational chemistry; continuous random networks; machine learning; silicon; MOLECULAR-DYNAMICS; PHASE-TRANSITION; ORDER; DEFECTS; MODELS;
D O I
10.1002/anie.201902625
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Amorphous materials are being described by increasingly powerful computer simulations, but new approaches are still needed to fully understand their intricate atomic structures. Here, we show how machine-learning-based techniques can give new, quantitative chemical insight into the atomic-scale structure of amorphous silicon (a-Si). We combine a quantitative description of the nearest- and next-nearest-neighbor structure with a quantitative description of local stability. The analysis is applied to an ensemble of a-Si networks in which we tailor the degree of ordering by varying the quench rates down to 10(10)Ks(-1). Our approach associates coordination defects in a-Si with distinct stability regions and it has also been applied to liquid Si, where it traces a clear-cut transition in local energies during vitrification. The method is straightforward and inexpensive to apply, and therefore expected to have more general significance for developing a quantitative understanding of liquid and amorphous states of matter.
引用
收藏
页码:7057 / 7061
页数:5
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