Sputtered rutile stoichiometric TiO2 nanocrystalline films

被引：9

作者：

Vale, A.

Chaure, N.

Simonds, M.

Ray, A. K.

Bricklebank, N.

机构：

[1] Univ London, Queen Mary, Dept Mat, Nanotechnol Res Labs, London E1 4NS, England

[2] Sheffield Hallam Univ, Sch Engn, Sheffield S1 1WB, S Yorkshire, England

[3] Univ Dublin Trinity Coll, Dept Phys, Dublin 2, Ireland

[4] Sheffield Hallam Univ, Mat Res Inst, Sheffield S1 1WB, S Yorkshire, England

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2006年 / 17卷 / 10期

关键词：

D O I：

10.1007/s10854-006-0034-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Titanium dioxide (TiO2) films were prepared at room temperature on silicon and glass substrates using DC reactive magnetron sputtering at the rate of 0.1 nms(-1) from a pure metal Ti target. X-ray diffraction (XRD) studies on freshly prepared samples showed a purely rutile phase. It is found from AFM that annealing of fresh TiO2 films at 550 degrees C for 30 min produced an increase in grain size by a factor of at least 1.5. X-ray photoelectron spectroscopies (XPS) gives correct ratio for purely TiO2 stoichiometry. Optical band gap was estimated to be 3.2 eV from UV-vis transmission spectra.

引用

页码：851 / 855

页数：5

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