Vacancy self-trapping during rapid thermal annealing of silicon wafers

被引：30

作者：

Frewen, Thomas A. ^{[1
]}

Sinno, Talid ^{[1
]}

机构：

[1] Univ Penn, Dept Chem & Biomol Engn, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2385069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial variations in the oxide precipitate density, which are observed following certain rapid thermal annealing conditions. The formation of these nanometer-sized voids is predicted on the basis of their recent model for vacancy aggregation that accounts for high temperature entropic effects.

引用

页数：3

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