Advanced determination of piezoelectric properties of AlN thin films on silicon substrates

被引：5
|
作者：
Sanchez-Rojas, J. L. [1 ]
Hernando, J. [1 ]
Ababneh, A. [2 ]
Schmid, U. [2 ]
Olivares, J. [3 ]
Clement, M. [3 ]
Iborra, E. [3 ]
机构：
[1] Univ Castilla La Mancha, ETSI Ind, Dpto Ingn Elect Elect Automat & Comunicac, E-13071 Ciudad Real, Spain
[2] Univ Saarland, Fac Nat Sci & Technol 2, Chair Micromech, Chair Microfluid Microactuators, D-66123 Saarbrucken, Germany
[3] Univ Politecn Madrid, E T S I Telecommun, Dpto Tecnol Elect, E-28040 Madrid, Spain
来源：
2008 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4 AND APPENDIX | 2008年
关键词：
Piezoelectric constants; Aluminum Nitride; vibrometer; STRESS;
D O I：
10.1109/ULTSYM.2008.0218
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
Piezoelectric deformations of thin, aluminum nitride (AlN) layers, on top of a silicon substrate, were studied by numerical calculations and interferometric measurements. Our calculation by finite element method demonstrates that substrate deformation under the top electrode may be comparable to the electric field induced deformation in the thin AlN layer, for a given applied voltage. Simulations also show the effect of a clamped or free substrate condition and the relative contributions of d(33) and d(31) piezoelectric constants. A Laser scanning vibrometry technique was used to measure deformations in the top surface with sub-picometer vertical resolution. By comparing calculations and experimental data, quantitative information about both d(33) and d(31) constants can be obtained.
引用
收藏
页码：903 / +
页数：2
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