Correlation between the 1/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors

In this work, the parameters extracted from the 1/f noise in silicon n-channel metal-oxide-semiconductor field-effect transistors with different HfO2/SiO2 gate stacks, corresponding with different equivalent oxide thickness (EOT) are reported and their relationship with the effective low-field mobility is studied. It is found that the 1.5 nm EOT transistors show lower 1/f noise, from which a lower effective trap density is derived, compared with their 2 nm EOT counterparts. In addition, the gate stack with the higher trap density yields a lower mobility and a lower mobility scattering coefficient. (C) 2004 American Institute of Physics.