Investigation of N-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate

被引：7

作者：

Endo, Kazuhiko ^{[1
]}

Masahara, Meishoku ^{[1
]}

Liu, Yongxun ^{[1
]}

Matsukawa, Takashi ^{[1
]}

Ishii, Kenichi ^{[1
]}

Sugimata, Etsurou ^{[1
]}

Takashima, Hidenori ^{[1
]}

Yamauchi, Hiromi ^{[1
]}

Suzuki, Eiichi ^{[1
]}

机构：

[1] AIST, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期

关键词：

triple-gate; dopant profile; ion implantation; sub-threshold; mobility;

D O I：

10.1143/JJAP.45.3097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the fabrication processes and device characteristics for n-channel triple-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) on (100) silicon-on-insulator substrates. By optimizing the diagonal ion implantation conditions for the narrow fin channel, the fabricated triple-gate device showed an electron mobility almost compatible to a planar MOSFET with a supreme subthreshold slope of 64 mV/decade and drain induced barrier lowering (DIBL) of 15 mV/V.

引用

页码：3097 / 3100

页数：4

共 50 条

[1] Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors
Yang, Xiaodong
Choi, Younsung
Lim, Jisong
Nishida, Toshikazu
Thompson, Scott
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
[2] Triple-gate metal-oxide-semiconductor field effect transistors fabricated with interference lithography
Lemme, MC
Moormann, C
Lerch, H
Möller, M
Vratzov, B
Kurz, H
[J]. NANOTECHNOLOGY, 2004, 15 (04) : S208 - S210
[3] NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors
Gao, W
Conley, JF
Ono, Y
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (23) : 4666 - 4668
[4] Investigation of impact ionization in strained-Si n-channel metal-oxide-semiconductor field-effect transistors
Kang, Ting-Kuo
Huang, Po-Chin
Sa, Yu-Huan
Wu, San-Lein
Chang, Shoou-Jinn
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2664 - 2667
[5] Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors
Hoshii, Takuya
Sugahara, Satoshi
Takagi, Shin-ichi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2122 - 2126
[6] HYDROGENATION EFFECT IN AN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
LEE, CH
LEE, CC
CHANG, KJ
KIM, SC
JANG, J
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (02) : 134 - 136
[7] A unified functional reliability model for N-channel metal-oxide-semiconductor field-effect transistors with sub 2 nm gate oxide
Lee, HM
Du, LJ
Liang, MS
King, YC
Charles, CLM
Hsu, CCH
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (09): : 5546 - 5550
[8] INVESTIGATION OF FLOATING BODY EFFECTS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
OUISSE, T
GHIBAUDO, G
BRINI, J
CRISTOLOVEANU, S
BOREL, G
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3912 - 3919
[9] Observation of double peak in the substrate current versus gate voltage characteristics of n-channel metal-oxide-semiconductor field effect transistors
Anil, KG
Eisele, I
Mahapatra, S
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (15) : 2238 - 2240
[10] The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric
Hsu, De-Cheng
Chang, Ingram Yin-ku
Wang, Ming-Tsong
Juan, Pi-Chun
Wang, Y. L.
Lee, Joseph Ya-min
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (20)

← 1 2 3 4 5 →