Effect of hydrogen on Pt/GaN Schottky diodes

被引：4
|
作者：
Irokawa, Yoshihiro [1 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 12期
关键词：
GaN; Schottky barrier diodes; Hydrogen; CAPACITANCE-VOLTAGE; INDUCED DEGRADATION; GAS SENSOR; DEVICES;
D O I：
10.35848/1347-4065/abc65f
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of hydrogen on Pt/GaN Schottky diodes was studied using current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy measurements. The results showed that hydrogen exposure reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region. Exposure to dry air restored the I-V curves, 1/C-2-V curves, and Nyquist plots to the original values more rapidly than exposure to pure N-2, suggesting that Pt functioned as a catalyst. Hydrogen-induced changes in the properties of the Pt/GaN interface oxide may be related to these phenomena.
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页数：5
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