Effect of hydrogen on Pt/GaN Schottky diodes

The effect of hydrogen on Pt/GaN Schottky diodes was studied using current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy measurements. The results showed that hydrogen exposure reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region. Exposure to dry air restored the I-V curves, 1/C-2-V curves, and Nyquist plots to the original values more rapidly than exposure to pure N-2, suggesting that Pt functioned as a catalyst. Hydrogen-induced changes in the properties of the Pt/GaN interface oxide may be related to these phenomena.