Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes

被引：2
|
作者：
Irokawa, Yoshihiro [1 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
ECS ELECTROCHEMISTRY LETTERS | 2014年 / 3卷 / 11期
关键词：
GAS;
D O I：
10.1149/2.0041411eel
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes has been investigated at various temperatures using electrochemical impedance spectroscopy. As a result, it is first found that exposure of the diodes to hydrogen does not create an additional RC circuit on the Nyquist plane which represents hydrogen-induced electric double layer, and the radius of the existing semicircle representing the RC circuit for semiconductor space charge region is dramatically reduced upon hydrogen exposure. This result implies that hydrogen may not create electric double layer at the Pt-AlGaN interface but change the property of the semiconductor space charge region. (C) 2014 The Electrochemical Society. All rights reserved.
引用
收藏
页码：B17 / B19
页数：3
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