Calculation of the noise temperature of microwave transistor low-temperature noise generators

被引：1

作者：

Aderikhin, VI

Dorofeev, AA

Topol'nitskii, VN

Uzdin, RI

机构：

来源：

MEASUREMENT TECHNIQUES | 2002年 / 45卷 / 02期

关键词：

Physical Chemistry; Analytical Chemistry; Microwave; Frequency Band; Reference Data;

D O I：

10.1023/A:1015556125278

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method of calculating the noise temperature of a microwave transistor low-temperature noise generator by using reference data on the noise parameters and the coefficients of the scattering matrix of the transistor is developed for the 8-40 GHz frequency band.

引用

页码：201 / 209

页数：9

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