Calculation of the noise temperature of microwave transistor low-temperature noise generators

被引：1
|
作者：
Aderikhin, VI
Dorofeev, AA
Topol'nitskii, VN
Uzdin, RI
机构：
来源：
MEASUREMENT TECHNIQUES | 2002年 / 45卷 / 02期
关键词：
Physical Chemistry; Analytical Chemistry; Microwave; Frequency Band; Reference Data;
D O I：
10.1023/A:1015556125278
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A method of calculating the noise temperature of a microwave transistor low-temperature noise generator by using reference data on the noise parameters and the coefficients of the scattering matrix of the transistor is developed for the 8-40 GHz frequency band.
引用
收藏
页码：201 / 209
页数：9
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